The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Jul. 29, 2022
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/40 (2023.01); H10B 41/27 (2023.01); H10B 41/41 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/40 (2023.02); H10B 41/27 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02);
Abstract
A semiconductor device, a manufacturing method thereof and a NAND memory device are disclosed. The method comprises forming a substrate including an active region and an isolation region located around the active region. The active region includes a source region, a channel region, and a drain region. The method further comprises forming a groove between the isolation region and the channel region and partially above the isolation region, and forming a gate in the groove and on the channel region.
Yao, Lan. (2026). Semiconductor device including reduced-size transistors, manufacturing method thereof, and nand memory device (U.S. Patent No. 12543319). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12543319
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile