The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Mar. 30, 2022
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/762 (2006.01); H01L 27/092 (2006.01); H10B 41/40 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H01L 21/76229 (2013.01); H01L 27/0922 (2013.01); H10B 41/40 (2023.02); H10B 43/40 (2023.02);
Abstract
A semiconductor device and a method for fabricating the same are disclosed. A substrate including a first device region and a second device region is provided. A first isolation structure is formed in the substrate of the first device region and a second isolation structure is formed in the substrate of the second device region. Ion implantation on the first isolation structure is performed. The first isolation structure and the second isolation structure are etched back to form a first recess in the first isolation structure and a second recess in the second isolation structure.