The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Oct. 26, 2021
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Yanwei Shi, Wuhan, CN;
Yanhong Wang, Wuhan, CN;
Cheng Gan, Wuhan, CN;
Liang Chen, Wuhan, CN;
Wei Liu, Wuhan, CN;
Zhiliang Xia, Wuhan, CN;
Wenxi Zhou, Wuhan, CN;
Kun Zhang, Wuhan, CN;
Yuancheng Yang, Wuhan, CN;
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/40 (2023.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H10B 41/41 (2023.01);
U.S. Cl.
CPC ...
H10B 43/40 (2023.02); G11C 16/0483 (2013.01); G11C 16/24 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H10B 41/41 (2023.02); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01);
Abstract
In certain aspects, a memory device includes an array of memory cells and a plurality of peripheral circuits coupled to the array of memory cells. The peripheral circuits include a first peripheral circuit including a recess gate transistor. The peripheral circuits also include a second peripheral circuit including a flat gate transistor.