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For the Inventor, By the Inventor

Hubei, China

Cheng Gan

This inventor holds 14 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2021-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cheng Gan. Retrieved from https://idiyas.com/inventor/cheng-gan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 14 

% Patents Active = 100.0


Average Co-Inventor Count = 3.8

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Hubei, CN (2021 - 2022)
  • Wuhan, CN (2022 - 2024)

Company Filing History:

goldMedal14 out of 1,190 
 
Yangtze Memory Technologies Co., Ltd.
 patents

Years Active: 2021-2025

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14 patents (USPTO):Explore Patents
1. 12389611 - Structure and method for forming capacitors for a three-dimensional NAND (2025-08-12),
2. 12278209 - Peripheral circuit having recess gate transistors and method for forming the same (2025-04-14),
3. 12255164 - Structure and method for isolation of bit-line drivers for a three-dimensional NAND (2025-03-18),
4. 12183698 - Structure and method for isolation of bit-line drivers for a three-dimensional NAND (2024-12-31),
5. 12136449 - Capacitor structure and method of forming the same (2024-11-05),
6. 12089413 - Peripheral circuit having recess gate transistors and method for forming the same (2024-09-10),
7. 11887646 - Capacitor structure and method of forming the same (2024-01-30),
8. 11538780 - Structure and method for isolation of bit-line drivers for a three-dimensional NAND (2022-12-27),
9. 11437464 - Structure and method for forming capacitors for a three-dimensional NAND (2022-09-06),
10. 11270770 - Local word line driver device, memory device, and fabrication method thereof (2022-03-08),
11. 11264455 - Backside deep isolation structures for semiconductor device arrays (2022-03-01),
12. 11232825 - Capacitor structure and method of forming the same (2022-01-25),
13. 11177343 - Three-dimensional memory devices with backside isolation structures (2021-11-16),
14. 11031282 - Three-dimensional memory devices with deep isolation structures (2021-06-08),

Title: The Innovative Journey of Cheng Gan

Introduction: Cheng Gan, a pioneering inventor hailing from Hubei, China, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Cheng Gan holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: Throughout his illustrious career, Cheng Gan has been recognized for his innovative solutions to complex problems, earning him prestigious awards and accolades in the industry.

Collaborations: Cheng Gan has collaborated with leading research institutions and tech companies to further develop and implement his inventions, fostering a culture of innovation and progress in the field.

Conclusion: Cheng Gan's relentless pursuit of innovation and his passion for creating solutions that make a difference have solidified his reputation as a visionary inventor in the global technology landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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