The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Dec. 12, 2022
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
Disclosed in the application are a semiconductor device structure and a manufacturing method thereof. The semiconductor device structure includes: a semiconductor substrate; active regions and isolation structures located in the semiconductor substrate and arranged alternately at intervals in a first direction, the active regions extending in a second direction perpendicular to the first direction; gate structures located at least on the active regions; and virtual structures located at least on the isolation structures, a spacing existing between the gate structures and the virtual structures in the second direction. The active regions further include source-doped regions and drain-doped regions located on two sides of the gate structures, projections of the virtual structures on the isolation structures are located between the source-doped regions, or projections of the virtual structures on the isolation structures are located between the drain-doped regions.