Cheng Gan

Title: Cheng Gan and Semiconductor Device Innovation.

Introduction

Cheng Gan is an inventor based in Wuhan, China, associated with Yangtze Memory Technologies Co., Ltd. His patent work concerns semiconductor device structures and their manufacturing.

Latest Patents

The supplied information lists one patent for Cheng Gan: “Semiconductor Device Structure and Manufacturing Method Therefor.” The application describes a semiconductor substrate containing alternating active regions and isolation structures. Gate structures are positioned at least over the active regions, while virtual structures are positioned at least over the isolation structures, with spacing between the gates and virtual structures in the direction perpendicular to the active regions’ extension. The active regions include source-doped and drain-doped regions on opposite sides of the gate structures. The virtual structures’ projections onto the isolation structures are positioned between source-doped regions or between drain-doped regions. This arrangement forms the central feature of the disclosed device structure and manufacturing method.

Career Highlights

Gan’s listed patent activity reflects work in semiconductor device design and fabrication. The supplied information identifies 1 patent and associates him with Yangtze Memory Technologies Co., Ltd.

Collaborations

The supplied information names Xin Wang and Wu Tian as Gan’s coworkers. It does not specify their roles in the patent or describe any particular collaboration.

Conclusion

Cheng Gan’s listed invention addresses the arrangement of gate and virtual structures in a semiconductor device, highlighting his contribution to semiconductor technology.