The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Mar. 23, 2022
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/762 (2006.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 62/115 (2025.01); H01L 21/76224 (2013.01);
Abstract
A semiconductor device and a method of fabricating the semiconductor device are provided. The method includes: forming a first bottom isolation layer and a second bottom isolation layer in a substrate, the thickness of the second bottom isolation layer being less than that of the first bottom isolation layer; and forming, on the a first active area in the substrate, a first gate structure extending to the first bottom isolation layer and forming, on a second active area in the substrate, a second gate structure extending to the second bottom isolation layer.