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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12598965 B1

PDFFull Text
Date of Patent:
Apr. 07, 2026

Filed:

Jun. 30, 2022

3d nand memory device with isolation trenches and fabrication method thereof

Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Huidan Hou, Wuhan, CN;

Lan Yao, Wuhan, CN;

Yanwei Shi, Wuhan, CN;

Assignee:

YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;

Attorney:

BAYES PLLC

Primary Examiner:

Maliheh Malek

Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H10B 41/40 (2023.01); H10B 43/40 (2023.01); H10P 50/00 (2026.01); H10P 50/64 (2026.01); H10W 10/00 (2026.01); H10W 10/17 (2026.01); H10W 20/00 (2026.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10W 10/014 (2026.01); H10B 41/40 (2023.02); H10B 43/40 (2023.02); H10P 50/642 (2026.01); H10P 50/73 (2026.01); H10W 10/17 (2026.01); H10W 20/051 (2026.01); H10D 84/0188 (2025.01); H10D 84/038 (2025.01);
Abstract

The present disclosure discloses a semiconductor device and a fabrication method thereof. In the method, firstly etching a substrate in a first device region to form at least one first trench and then etching the substrate in both first device region and second device region to form at least one first isolation trench at the positions corresponding to the at least one first trench and form at least one second isolation trench in the second device region. Herein a depth of the first isolation trench is larger than that of the second isolation trench.

Find Patent Forward Citations

Hou, Huidan. (2026). 3d nand memory device with isolation trenches and fabrication method thereof (U.S. Patent No. 12598965). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12598965

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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