The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Dec. 04, 2020
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10D 30/694 (2025.01); H10D 64/037 (2025.01);
Abstract
Embodiments of three-dimensional (3D) memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate and a channel structure extending vertically above the substrate and having a plum blossom shape including a plurality of petals in a plan view. The channel structure includes, in each of the plurality of petals, a semiconductor channel and a channel plug above and in contact with the semiconductor channel.
Gao, Tingting. (2026). Three-dimensional memory devices with channel structures having plum blossom shape (U.S. Patent No. 12532468). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12532468
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile