Wuhan, China

Wanbo Geng

USPTO Granted Patents = 11 

Average Co-Inventor Count = 4.7

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Hubei, CN (2023)
  • Wuhan, CN (2023 - 2024)

Company Filing History:


Years Active: 2023-2025

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11 patents (USPTO):Explore Patents

Title: Wanbo Geng: Innovator in Three-Dimensional Memory Technology

Introduction

Wanbo Geng is a prominent inventor based in Wuhan, China, known for his significant contributions to the field of semiconductor technology. He holds a total of 10 patents, showcasing his innovative approach to developing advanced memory devices.

Latest Patents

Among his latest patents is a groundbreaking invention titled "Three-dimensional memory devices with channel structures having plum blossom shape." This patent describes embodiments of three-dimensional (3D) memory devices and methods for forming them. In this invention, a 3D memory device includes a substrate and a channel structure that extends vertically above the substrate, featuring a unique plum blossom shape with multiple petals in a plan view. The channel structure comprises several semiconductor channels located within the petals.

Another notable patent is "Two-step L-shaped selective epitaxial growth." This disclosure presents a method for processing a semiconductor device that includes a stack formed over a source sacrificial layer above a substrate. The method involves several steps, including exposing a lower sidewall of the channel structure, forming a protection layer, and creating a source connection layer over the exposed channel layer and substrate.

Career Highlights

Wanbo Geng is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to push the boundaries of memory technology. His work has been instrumental in advancing the capabilities of 3D memory devices, making significant impacts in the semiconductor industry.

Collaborations

He collaborates with talented coworkers, including Lei Xue and Tingting Gao, who contribute to the innovative environment at Yangtze Memory Technologies Co., Ltd.

Conclusion

Wanbo Geng's contributions to the field of semiconductor technology, particularly in 3D memory devices, highlight his role as a leading inventor. His patents reflect a commitment to innovation and excellence in technology development.

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