The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Mar. 16, 2022
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Xiaolong Du, Hubei, CN;
Wanbo Geng, Hubei, CN;
Zhiliang Xia, Hubei, CN;
Xiaoxin Liu, Hubei, CN;
Tingting Gao, Hubei, CN;
Changzhi Sun, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Abstract
A method for forming a three-dimensional memory device includes forming an alternating dielectric stack on a substrate and forming an opening extending partially through the alternating dielectric stack. The opening exposes sidewalls of the alternating dielectric stack. The method also includes disposing a protection layer in the opening and on the exposed sidewalls of the alternating dielectric stack. The method further includes extending the opening through the alternating dielectric stack and forming channel layers in the extended opening.