Wuhan, China

Tingting Gao

USPTO Granted Patents = 11 

Average Co-Inventor Count = 4.7

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Hubei, CN (2023)
  • Wuhan, CN (2023 - 2024)

Company Filing History:


Years Active: 2023-2025

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11 patents (USPTO):Explore Patents

Title: **Innovative Contributions of Tingting Gao in Semiconductor Technology**

Introduction

Tingting Gao, an accomplished inventor based in Wuhan, China, has made significant strides in the semiconductor field with a total of ten patents to her name. Her work primarily focuses on advancing three-dimensional (3D) memory devices and improving methods for semiconductor device processing, paving the way for enhanced memory technologies.

Latest Patents

Gao's latest innovations include two notable patents:

1. **Three-dimensional memory devices with channel structures having plum blossom shape** - This patent presents embodiments of 3D memory devices that feature a unique channel structure, designed to resemble a plum blossom in a plan view. The device consists of a substrate and a channel structure that extends vertically, incorporating multiple semiconductor channels located within the petals of the blossom.

2. **Two-step L-shaped selective epitaxial growth** - This patent showcases a method for processing semiconductor devices. The approach involves forming a stack over a source sacrificial layer above a substrate, with an L-shaped channel structure penetrating the stack. The method emphasizes efficient exposure and formation of channel and source connection layers, which is crucial for enhancing semiconductor functionality.

Career Highlights

Tingting Gao's career has been marked by her association with Yangtze Memory Technologies Co., Ltd., where she continues to influence memory technology development. Her inventive spirit and technical expertise have led to groundbreaking advancements in 3D memory areas, positioning her as a key figure in the semiconductor industry.

Collaborations

Gao collaborates closely with her colleagues Lei Xue and Wanbo Geng, whose combined efforts contribute significantly to the technological advancements at Yangtze Memory Technologies. Together, they strive for innovation in semiconductor technologies, fostering a collaborative environment that enhances their research and development capabilities.

Conclusion

Through her innovative patents and collaborative efforts, Tingting Gao holds a prominent position in the semiconductor technology landscape. Her contributions are not only shaping the future of memory devices but also reflecting the potential of female inventors in driving progress in engineering and technology fields.

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