The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Sep. 01, 2022
Applicant:
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Inventors:
Assignee:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/35 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/35 (2023.02); H10B 43/27 (2023.02);
Abstract
According to an aspect of the disclosure, a semiconductor device is provided. The semiconductor device includes a stack structure of alternating insulating layers and word line layers, a first top select gate (TSG) layer over the stack structure, and a separation structure extending through the first TSG layer, where the first TSG layer is divided by the separation structure into a first sub TSG layer and a second sub TSG layer. The semiconductor device includes a conductive layer positioned between the first sub TSG layer and the separation structure, and between the second sub TSG layer and the separation structure.