The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
Dec. 07, 2020
Applicant:
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Inventors:
Assignee:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11551 (2017.01); H01L 27/11582 (2017.01); H10B 43/27 (2023.01); H01L 21/28 (2006.01); H01L 23/522 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 23/5226 (2013.01); H01L 29/40117 (2019.08); H01L 29/4234 (2013.01);
Abstract
A semiconductor device is provided. The semiconductor device includes word line layers and insulating layers that are alternatingly stacked along a vertical direction perpendicular to a substrate of the semiconductor device. The semiconductor device includes a channel structure that extends along the vertical direction through the word line layers and the insulating layers. A cross-section of the channel structure that is perpendicular to the vertical axis includes channel layer sections that are spaced apart from one another.