The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Apr. 26, 2022
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Xiaolong Du, Wuhan, CN;
Tingting Gao, Wuhan, CN;
Zhiliang Xia, Wuhan, CN;
Changzhi Sun, Wuhan, CN;
Jiayi Liu, Wuhan, CN;
Xiaoxin Liu, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
The three-dimensional memory includes a stack structure which includes: a first stack and a second stack, the first stack including control gate layers and first dielectric layers which are stacked alternately, the second stack including top select gate layers and second dielectric layers which are stacked alternately in the same stacking direction; a plurality of channel structures which run though the stack structure and include charge storage layers, the charge storage layers including a plurality of charge storage portions disposed discontinuously in the stacking direction, the charge storage portions being disposed between the adjacent first dielectric layers; and at least one isolation structure which runs through the top select gate layers and is located between the adjacent channel structures.