The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Oct. 30, 2020
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Wanbo Geng, Wuhan, CN;
Lei Xue, Wuhan, CN;
Xiaoxin Liu, Wuhan, CN;
Tingting Gao, Wuhan, CN;
Weihua Cheng, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
Embodiments of three-dimensional (3D) memory devices and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A channel hole extending vertically above a substrate and having a plum blossom shape in a plan view is formed. A continuous blocking layer, a continuous charge trapping layer, and a continuous tunneling layer each following the plum blossom shape are formed from outside to inside in this order along sidewalls of the channel hole. A plurality of separate semiconductor channels each disposed over part of the continuous tunneling layer at a respective apex of the plum blossom shape are formed.