Wuhan, China

Weihua Cheng

This inventor holds 29 USPTO granted patents and 13 published patent applications and 9 EPO patents, primarily in Semiconductor Devices. Top assignees: Yangtze Memory Technologies Co., Ltd., Wuhan Xinxin Semiconductor Manufacturing Co., Ltd., Yangtze Memory Technologies., Ltd.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Weihua Cheng. Retrieved from https://idiyas.com/inventor/weihua-cheng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29 

% Patents Active = 96.6

 

Average Co-Inventor Count = 2.9

ph-index = 5

Forward Citations = 72(Granted Patents)


Location History:

  • Hubei, CN (2017 - 2023)
  • Wuhan, CN (2020 - 2024)

Company Filing History:


Years Active: 2017-2026

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Areas of Expertise:
Vertical Transistors
Hybrid Bonding
Three-Dimensional Memory
Unified Semiconductor Devices
Programmable Logic Device
Dynamic Random-Access Memory
NAND Flash Memory
Channel Structures
Semiconductor Structure
Heat Dissipation
29 patents (USPTO):Explore Patents

Title: Inventor Weihua Cheng: Revolutionizing Technology in Wuhan

Introduction: Weihua Cheng is a visionary inventor based in Wuhan, China, known for his groundbreaking contributions to the field of technology.

Latest Patents: Cheng holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his innovative mindset and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Cheng has worked with leading tech companies and research institutions, spearheading projects that have pushed the boundaries of technological advancements.

Collaborations: Cheng has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge exchange to drive progress in the tech industry.

Conclusion: Weihua Cheng's relentless pursuit of innovation and his passion for creating cutting-edge technologies continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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