The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Nov. 03, 2022
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Zhenyu Lu, Hubei, CN;
Simon Shi-Ning Yang, Hubei, CN;
Feng Pan, Hubei, CN;
Steve Weiyi Yang, Hubei, CN;
Jun Chen, Hubei, CN;
Guanping Wu, Hubei, CN;
Wenguang Shi, Hubei, CN;
Weihua Cheng, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Abstract
Embodiments of through array contact structures of a 3D memory device and fabricating method thereof are disclosed. The memory device includes an alternating layer stack disposed on a first substrate. The alternating layer stack includes a first region including an alternating dielectric stack, and a second region including an alternating conductor/dielectric stack. The memory device further comprises a barrier structure including two parallel barrier walls extending vertically through the alternating layer stack and laterally along a word line direction to laterally separate the first region from the second region. The memory device further comprises a plurality of through array contacts in the first region, each through array contact extending vertically through the alternating dielectric stack.