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For the Inventor, By the Inventor

Hubei, China

Wenguang Shi

This inventor holds 15 USPTO granted patents and 4 published patent applications and 2 EPO patents, primarily in Three-Dimensional Memory Devices. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2020-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wenguang Shi. Retrieved from https://idiyas.com/inventor/wenguang-shi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 15 

% Patents Active = 100.0

 

Average Co-Inventor Count = 6.1

ph-index = 6

Forward Citations = 86(Granted Patents)


Company Filing History:

goldMedal15 out of 1,505 
 
Yangtze Memory Technologies Co., Ltd.
 patents

Years Active: 2020-2024

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Areas of Expertise:
Three-Dimensional Memory
Hybrid Bonding
Interconnect Structure
Array Contact
Joint Opening Structures
Memory Device
Device Formation
Contact Structure
15 patents (USPTO):Explore Patents
1. 12185550 - Through array contact structure of three-dimensional memory device (2024-12-31),
2. 12137568 - Hybrid bonding contact structure of three-dimensional memory device (2024-11-05),
3. 12137567 - Interconnect structure of three-dimensional memory device (2024-11-05),
4. 11956953 - Joint opening structures of three-dimensional memory devices and methods for forming the same (2024-04-09),
5. 11785776 - Through array contact structure of three-dimensional memory device (2023-10-10),
6. 11758732 - Hybrid bonding contact structure of three-dimensional memory device (2023-09-12),
7. 11545505 - Through array contact structure of three-dimensional memory device (2023-01-03),
8. 11527547 - Hybrid bonding contact structure of three-dimensional memory device (2022-12-13),
9. 11482532 - Joint opening structures of three-dimensional memory devices and methods for forming the same (2022-10-25),
10. 10930663 - Interconnect structure of three-dimensional memory device (2021-02-23),
11. 10923491 - Hybrid bonding contact structure of three-dimensional memory device (2021-02-16),
12. 10910397 - Through array contact structure of three- dimensional memory device (2021-02-02),
13. 10886291 - Joint opening structures of three-dimensional memory devices and methods for forming the same (2021-01-05),
14. 10593690 - Hybrid bonding contact structure of three-dimensional memory device (2020-03-17),
15. 10553604 - Through array contact structure of three-dimensional memory device (2020-02-04),

Title: Inventor Wenguang Shi

Introduction: Wenguang Shi is a renowned inventor hailing from Hubei, China. He has made significant contributions to the field of innovation with his groundbreaking inventions.

Latest Patents: Wenguang Shi holds several patents in various technological domains, showcasing his versatility and expertise in inventing new solutions to complex problems.

Career Highlights: Throughout his career, Wenguang Shi has demonstrated a keen eye for identifying gaps in the market and developing innovative products to fill those voids. His dedication to pushing the boundaries of technology has earned him a reputation as a visionary inventor.

Collaborations: Wenguang Shi has collaborated with leading research institutions and companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has led to the successful development and commercialization of several groundbreaking technologies.

Conclusion: In conclusion, Wenguang Shi's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors. His contributions continue to inspire future generations of inventors to think outside the box and create solutions that shape the world we live in.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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