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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12185550 B1

PDFFull Text
Date of Patent:
Dec. 31, 2024

Filed:

Aug. 08, 2023

Through array contact structure of three-dimensional memory device

Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Zhenyu Lu, Wuhan, CN;

Wenguang Shi, Wuhan, CN;

Guanping Wu, Wuhan, CN;

Xianjin Wan, Wuhan, CN;

Baoyou Chen, Wuhan, CN;

Assignee:

YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;

Attorney:

BAYES PLLC

Primary Examiner:

Calvin Y Choi

Int. Cl.
CPC ...
H10B 43/50 (2023.01); H01L 23/522 (2006.01); H01L 23/535 (2006.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/50 (2023.02); H01L 23/5226 (2013.01); H01L 23/535 (2013.01); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02); H10B 43/35 (2023.02);
Abstract

A three-dimensional (3D) memory device includes a staircase region including a first stack and a second stack, a barrier structure extending vertically through the first stack and laterally separating the first stack from the second stack, and a through array contact extending vertically through the first stack. The first stack includes first and second dielectric layers arranged alternately in a vertical direction. The second stack includes conductor layers and third dielectric layers arranged alternately in the vertical direction. The barrier structure includes an unclosed shape.

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Lu, Zhenyu. (2024). Through array contact structure of three-dimensional memory device (U.S. Patent No. 12185550). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12185550

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