logo

For the Inventor, By the Inventor

Hubei, China

Baoyou Chen

This inventor holds 15 USPTO granted patents and 5 published patent applications and 2 EPO patents. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2020-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Baoyou Chen. Retrieved from https://idiyas.com/inventor/baoyou-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 15 

% Patents Active = 100.0

 

Average Co-Inventor Count = 6.1

ph-index = 4

Forward Citations = 55(Granted Patents)


Location History:

  • Wuhan, CN (2020)
  • Hubei, CN (2020 - 2024)

Company Filing History:

goldMedal15 out of 1,190 
 
Yangtze Memory Technologies Co., Ltd.
 patents

Years Active: 2020-2025

Loading Chart...
Loading Chart...
15 patents (USPTO):Explore Patents
1. 12356616 - Openings layout of three-dimensional memory device (2025-07-08),
2. 12185550 - Through array contact structure of three-dimensional memory device (2024-12-31),
3. 11997851 - Staircase formation in three-dimensional memory device (2024-05-28),
4. 11956953 - Joint opening structures of three-dimensional memory devices and methods for forming the same (2024-04-09),
5. 11903195 - Openings layout of three-dimensional memory device (2024-02-13),
6. 11785776 - Through array contact structure of three-dimensional memory device (2023-10-10),
7. 11574919 - Openings layout of three-dimensional memory device (2023-02-07),
8. 11545505 - Through array contact structure of three-dimensional memory device (2023-01-03),
9. 11482532 - Joint opening structures of three-dimensional memory devices and methods for forming the same (2022-10-25),
10. 10910397 - Through array contact structure of three- dimensional memory device (2021-02-02),
11. 10886291 - Joint opening structures of three-dimensional memory devices and methods for forming the same (2021-01-05),
12. 10804283 - Openings layout of three-dimensional memory device (2020-10-13),
13. 10790297 - Method for forming channel hole in three-dimensional memory device using nonconformal sacrificial layer (2020-09-29),
14. 10790295 - Staircase formation in three-dimensional memory device (2020-09-29),
15. 10553604 - Through array contact structure of three-dimensional memory device (2020-02-04),

Title: Baoyou Chen - Innovative Inventor from Hubei, China

Introduction: Baoyou Chen is a renowned inventor hailing from Hubei, China, known for his groundbreaking contributions to various technological fields.

Latest Patents: Baoyou Chen holds several patents in the fields of renewable energy, sustainable agriculture, and advanced manufacturing processes, showcasing his diverse range of expertise.

Career Highlights: With a career spanning over two decades, Baoyou Chen has worked with leading research institutions and universities to develop cutting-edge technologies that have revolutionized the industry.

Collaborations: Throughout his career, Baoyou Chen has collaborated with multinational companies, innovative startups, and fellow inventors to bring his ideas to life and make a lasting impact on the world.

Conclusion: Baoyou Chen's passion for innovation and his relentless pursuit of excellence have solidified his position as a visionary inventor, inspiring the next generation of innovators to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…