The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2023
Filed:
Sep. 10, 2020
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Jia He, Hubei, CN;
Haihui Huang, Hubei, CN;
Fandong Liu, Hubei, CN;
Yaohua Yang, Hubei, CN;
Peizhen Hong, Hubei, CN;
Zhiliang Xia, Hubei, CN;
Zongliang Huo, Hubei, CN;
Yaobin Feng, Hubei, CN;
Baoyou Chen, Hubei, CN;
Qingchen Cao, Hubei, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Hubei, CN;
Abstract
Embodiments of semiconductor devices and methods for forming the semiconductor devices are disclosed. In an example, a method for forming device openings includes forming a material layer over a first region and a second region of a substrate, the first region being adjacent to the second region, forming a mask layer over the material layer, the mask layer covering the first region and the second region, and forming a patterning layer over the mask layer. The patterning layer covers the first region and the second region and including openings corresponding to the first region. The plurality of openings includes a first opening adjacent to a boundary between the first region and the second region and a second opening further away from the boundary. Along a plane parallel to a top surface of the substrate, a size of the first opening is greater than a size of the second opening.