Yaohua Yang

Title: Yaohua Yang: Innovator in Semiconductor Technology

Introduction

Yaohua Yang is a prominent inventor based in Hubei, China. He has made significant contributions to the field of semiconductor technology, holding a total of eight patents. His work focuses on advancements in three-dimensional memory devices, which are crucial for modern computing.

Latest Patents

Among his latest patents is the "Openings layout of three-dimensional memory device." This patent discloses embodiments of semiconductor devices and methods for forming these devices. The method involves forming a material layer over a substrate, creating a mask layer, and establishing a patterning layer that includes openings corresponding to specific regions of the substrate. Notably, the size of the openings varies, with the first opening being larger than the second, which is positioned further away from the boundary between two regions.

Another significant patent is the "Word line structure of three-dimensional memory device." This invention describes a memory device that includes a substrate and a stack over it. The stack is divided by a gate line slit, which extends in a specific direction and connects two portions of the stack through sub-connection portions. This innovative design enhances the functionality and efficiency of memory devices.

Career Highlights

Yaohua Yang is currently employed at Yangtze Memory Technologies Co., Ltd. His role at the company allows him to apply his expertise in semiconductor technology and contribute to the development of cutting-edge memory solutions. His work has positioned him as a key figure in the industry.

Collaborations

Throughout his career, Yang has collaborated with notable colleagues, including Jia He and Fandong Liu. These collaborations have fostered innovation and have been instrumental in advancing their shared goals in semiconductor research and development.

Conclusion

Yaohua Yang's contributions to semiconductor technology through his patents and work at Yangtze Memory Technologies Co., Ltd. highlight his importance in the field. His innovative approaches to three-dimensional memory devices continue to shape the future of technology.