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For the Inventor, By the Inventor

Hubei, China

Simon Shi-Ning Yang

This inventor holds 20 USPTO granted patents and 3 published patent applications and 4 EPO patents, primarily in Three-Dimensional Memory Devices. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2018-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Simon Shi-Ning Yang. Retrieved from https://idiyas.com/inventor/simon-shi-ning-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 100.0

 

Average Co-Inventor Count = 6.8

ph-index = 5

Forward Citations = 161(Granted Patents)


Company Filing History:

goldMedal20 out of 1,190 
 
Yangtze Memory Technologies Co., Ltd.
 patents

Years Active: 2018-2024

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Areas of Expertise:
Three-Dimensional Memory
Vertical Transistors
Hybrid Bonding
NAND Strings
Staircase Etch Control
Low-Dropout Regulators
Testing Methods
Source Structure
20 patents (USPTO):Explore Patents
1. 12170258 - Memory devices having vertical transistors and methods for forming the same (2024-12-17),
2. 12142575 - Staircase etch control in forming three-dimensional memory device (2024-11-12),
3. 12137568 - Hybrid bonding contact structure of three-dimensional memory device (2024-11-05),
4. 11805646 - Three-dimensional memory devices and methods for forming the same (2023-10-31),
5. 11758732 - Hybrid bonding contact structure of three-dimensional memory device (2023-09-12),
6. 11699657 - Three-dimensional memory devices having a plurality of NAND strings located between a substrate and a single crystalline silicon layer (2023-07-11),
7. 11527547 - Hybrid bonding contact structure of three-dimensional memory device (2022-12-13),
8. 11462474 - Three-dimensional memory devices having a plurality of NAND strings (2022-10-04),
9. 11264397 - Source structure of three-dimensional memory device and method for forming the same (2022-03-01),
10. 11211397 - Three-dimensional memory devices and methods for forming the same (2021-12-28),
11. 11031333 - Three-dimensional memory devices having a plurality of NAND strings (2021-06-08),
12. 10998079 - Structure and method for testing three-dimensional memory device (2021-05-04),
13. 10923491 - Hybrid bonding contact structure of three-dimensional memory device (2021-02-16),
14. 10804279 - Source structure of three-dimensional memory device and method for forming the same (2020-10-13),
15. 10679721 - Structure and method for testing three-dimensional memory device (2020-06-09),

Title: Simon Shi-Ning Yang: Pioneering Inventor from Hubei, China

Introduction: Simon Shi-Ning Yang is a renowned inventor hailing from Hubei, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Simon Shi-Ning Yang holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating a more efficient and eco-friendly world.

Career Highlights: With a career spanning over two decades, Simon Shi-Ning Yang has worked with leading tech companies and research institutions, spearheading projects that have revolutionized various industries.

Collaborations: Throughout his career, Simon Shi-Ning Yang has collaborated with top scientists, engineers, and researchers from around the globe, fostering a culture of innovation and knowledge-sharing.

Conclusion: Simon Shi-Ning Yang's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and entrepreneurs worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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