The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2024

Filed:

Dec. 16, 2021
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Simon Shi-Ning Yang, Wuhan, CN;

Hongbin Zhu, Wuhan, CN;

Wei Liu, Wuhan, CN;

Wenyu Hua, Wuhan, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1436 (2013.01);
Abstract

In certain aspects, a memory device includes a semiconductor layer, a peripheral circuit including a peripheral transistor in contact with the semiconductor layer, an array of memory cells disposed beside the semiconductor layer and the peripheral circuit, and bit lines coupled to the memory cells. Each of the memory cells includes a vertical transistor extending in a first direction, and a storage unit coupled to the vertical transistor. Each of the bit lines extends in a second direction perpendicular to the first direction. A respective one of the bit lines and a respective storage unit are coupled to opposite ends of each one of the memory cells in the first direction.


Find Patent Forward Citations

Loading…