IDiyas

For the Inventor, By the Inventor

Wuhan, China

Hongbin Zhu

USPTO Granted Patents = 39 

 

Average Co-Inventor Count = 2.6

ph-index = 3

Forward Citations = 28(Granted Patents)


Company Filing History:

goldMedal39 out of 1,139 
 
Yangtze Memory Technologies Co., Ltd.
 patents

Years Active: 2020-2025

Loading Chart...
Loading Chart...
39 patents (USPTO):
1. 12408339 - Memory devices having vertical transistors and methods for forming the same (2025-09-02),
2. 12408338 - Memory devices having vertical transistors and methods for forming the same (2025-09-02),
3. 12406954 - Memory devices having vertical transistors and methods for forming the same (2025-09-02),
4. 12394751 - Method of forming semiconductor structure (2025-08-19),
5. 12349341 - Memory devices having vertical transistors and methods for forming the same (2025-07-01),
6. 12232316 - Bonded memory device and fabrication methods thereof (2025-02-18),
7. 12176310 - Memory devices having vertical transistors and methods for forming the same (2024-12-24),
8. 12170258 - Memory devices having vertical transistors and methods for forming the same (2024-12-17),
9. 12144177 - Methods for forming channel structures with protective structure in three-dimensional memory devices (2024-11-12),
10. 12080665 - Memory devices having vertical transistors and methods for forming the same (2024-09-03),
11. 12074105 - Self-aligned contacts in three-dimensional memory devices and methods for forming the same (2024-08-27),
12. 12033967 - Memory devices having vertical transistors and methods for forming the same (2024-07-09),
13. 11805647 - Three-dimensional memory device having epitaxially-grown semiconductor channel and method for forming the same (2023-10-31),
14. 11792979 - Three-dimensional memory device having multi-deck structure and methods for forming the same (2023-10-17),
15. 11690219 - Three-dimensional memory devices having through array contacts and methods for forming the same (2023-06-27),

Title: Innovations in Memory Devices by Hongbin Zhu

Introduction

Hongbin Zhu, based in Wuhan, China, is a prolific inventor with an impressive portfolio of 34 patents. His work primarily focuses on advanced memory technologies, particularly three-dimensional (3D) memory devices. Zhu's innovations are paving the way for next-generation semiconductor solutions, significantly enhancing data storage capabilities.

Latest Patents

Zhu's latest patents include groundbreaking inventions related to bonded memory devices and fabrication methods. One of his notable patents describes embodiments of 3D memory devices formed by bonded semiconductor devices. The method involves forming an insulating material layer over a substrate, where it is not essential for the substrate to be made of single-crystalline silicon. The insulating material is patterned to create an isolation structure and trenches that house array-base regions. Memory arrays are built over these regions, significantly improving memory efficiency and capability.

Another significant patent focuses on memory devices featuring vertical transistors. This invention encompasses a 3D memory device comprising a first semiconductor structure that includes a peripheral circuit, and a second structure that contains an array of memory cells. Each memory cell features a vertical transistor and a storage unit, allowing for a more compact design while enhancing performance.

Career Highlights

Zhu is currently employed at Yangtze Memory Technologies Co., Ltd., where he contributes to pioneering advancements in memory technology. His work at the company demonstrates a commitment to pushing the boundaries of what is achievable in semiconductor technology.

Collaborations

Throughout his career, Hongbin Zhu has had the opportunity to collaborate with esteemed colleagues, including Juan Tang and Mei Lan Guo. This collaboration has fostered a dynamic environment for innovation, allowing for the exchange of ideas and enhanced development in memory technologies.

Conclusion

Hongbin Zhu stands out as a key figure in the field of semiconductor technology and memory devices. With a remarkable number of patents to his name and a focus on innovative solutions, Zhu's contributions are set to influence the future of data storage. His collaborations and work at Yangtze Memory Technologies underscores his role as a leading inventor committed to advancing the frontiers of technology.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…