The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Mar. 19, 2021
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Hongbin Zhu, Wuhan, CN;

Juan Tang, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/30 (2023.01); H10B 41/27 (2023.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 25/065 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); H01L 21/76816 (2013.01); H01L 23/5226 (2013.01); H01L 25/0657 (2013.01); H10B 43/27 (2023.02);
Abstract

Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a substrate and a stack structure in an insulating structure on the substrate. The stack structure includes alternating a plurality of conductor layers and a plurality of insulating layers. The 3D memory device further includes a source structure extending vertically through the alternating stack structure. The source structure includes at least one staggered portion along a respective sidewall. The 3D memory device further includes a channel structure and a support pillar each extending vertically through the alternating stack structure and a plurality of contact structures extending vertically through the insulating structure.


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