The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Dec. 16, 2021
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, a third semiconductor structure, a first bonding interface between the first semiconductor structure and the second semiconductor structure, and a second bonding interface between the second semiconductor structure and the third semiconductor structure. The first semiconductor structure includes a peripheral circuit. The second semiconductor structure includes a first array of memory cells. The third semiconductor structure includes a second array of memory cells. Each of the memory cells of the first and second arrays includes a vertical transistor extending in a first direction, and a storage unit coupled to the vertical transistor. The first array of memory cells is coupled to the peripheral circuit across the first bonding interface. The second array of memory cells is coupled to the peripheral circuit across the first bonding interface and the second bonding interfaces.