The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2023
Filed:
Feb. 03, 2021
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Hongbin Zhu, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A channel opening extending vertically is formed above a substrate. A semiconductor plug is formed in a lower portion of the channel opening. A memory film and a channel sacrificial layer are subsequently formed above the semiconductor plug and along a sidewall of the channel opening. A semiconductor plug protrusion protruding above the semiconductor plug and through a bottom of the memory film and the channel sacrificial layer is formed. A cap layer is formed in the channel opening and over the channel sacrificial layer. The cap layer covers the semiconductor plug protrusion. A semiconductor channel is formed between the memory film and the cap layer by replacing the channel sacrificial layer with a semiconductor material epitaxially grown from the semiconductor plug protrusion.