The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Sep. 29, 2021
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Xinsheng Wang, Wuhan, CN;
Li Zhang, Wuhan, CN;
Gaosheng Zhang, Wuhan, CN;
Xianjin Wan, Wuhan, CN;
Ziqun Hua, Wuhan, CN;
Jiawen Wang, Wuhan, CN;
Taotao Ding, Wuhan, CN;
Hongbin Zhu, Wuhan, CN;
Weihua Cheng, Wuhan, CN;
Shining Yang, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Abstract
The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first substrate, and a bonding layer located on a surface of the first substrate. The material of the first bonding layer is a dielectric material containing element carbon (C). C atomic concentration of a surface layer of the first bonding layer away from the first substrate is higher than or equal to 35%. The first bonding layer of the semiconductor structure may be used to enhance bonding strength during bonding.