Shining Yang

Title: Shining Yang: Innovator in Semiconductor Technology

Introduction

Shining Yang is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and reliability of semiconductor structures.

Latest Patents

One of his latest patents is titled "Method of forming semiconductor structure." This invention relates to a semiconductor structure that includes a first substrate and a bonding layer located on the surface of the first substrate. The bonding layer is made of a dielectric material containing carbon (C), with a C atomic concentration of at least 35% in the surface layer. This design aims to enhance bonding strength during the manufacturing process. Another notable patent is "Semiconductor structure and method of forming the same." This patent describes a semiconductor structure that consists of a first substrate, a first adhesive layer, a first buffer layer, and a first bonding layer. The structure is designed to improve adhesion and overall performance.

Career Highlights

Shining Yang is currently employed at Yangtze Memory Technologies Co., Ltd. His innovative work in semiconductor technology has positioned him as a key figure in the industry. His patents reflect a deep understanding of material science and engineering principles.

Collaborations

Shining Yang collaborates with talented individuals in his field, including coworkers Xinsheng Wang and Gaosheng Zhang. Their combined expertise contributes to the advancement of semiconductor technologies.

Conclusion

Shining Yang's contributions to semiconductor technology through his patents demonstrate his commitment to innovation and excellence. His work continues to influence the industry and pave the way for future advancements.