The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Apr. 07, 2019
Yangtze Memory Technologies Co., Ltd., Wuhan, Hubei Province, CN;
Xinsheng Wang, Wuhan, CN;
Li Zhang, Wuhan, CN;
Gaosheng Zhang, Wuhan, CN;
Xianjin Wan, Wuhan, CN;
Ziqun Hua, Wuhan, CN;
Jiawen Wang, Wuhan, CN;
Taotao Ding, Wuhan, CN;
Hongbin Zhu, Wuhan, CN;
Weihua Cheng, Wuhan, CN;
Shining Yang, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, Hubei Province, CN;
Abstract
A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a first substrate; a first adhesive layer disposed on the surface of the first substrate; a first buffer layer disposed on the surface of the first adhesive layer; and a first bonding layer disposed on the surface of the first buffer layer, wherein the densities of the first adhesive layer and the first buffer layer are greater than that of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and the first buffer layer, and the first buffer layer and the first bonding layer exhibit higher adhesion, which are beneficial to improve the performance of the semiconductor structure.