The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Apr. 07, 2019
Yangtze Memory Technologies Co., Ltd., Wuhan, Hubei Province, CN;
Xinsheng Wang, Wuhan, CN;
Li Zhang, Wuhan, CN;
Gaosheng Zhang, Wuhan, CN;
Xianjin Wan, Wuhan, CN;
Ziqun Hua, Wuhan, CN;
Jiawen Wang, Wuhan, CN;
Taotao Ding, Wuhan, CN;
Hongbin Zhu, Wuhan, CN;
Weihua Cheng, Wuhan, CN;
Shining Yang, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, Hubei Province, CN;
Abstract
The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first substrate; a first adhesive layer disposed on a surface of the first substrate; and a first bonding layer disposed on a surface of the first adhesive layer. A density of the first adhesive layer is greater than a density of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and first bonding layer, such that it is advantageous to improve a performance of the semiconductor structure.