The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
May. 05, 2020
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Jong Jun Kim, Hubei, CN;
Feng Pan, Hubei, CN;
Jong Seuk Lee, Hubei, CN;
Zhenyu Lu, Hubei, CN;
Yongna Li, Hubei, CN;
Lidong Song, Hubei, CN;
Youn Cheul Kim, Hubei, CN;
Steve Weiyi Yang, Hubei, CN;
Simon Shi-Ning Yang, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Abstract
Embodiments of methods for testing three-dimensional memory devices are disclosed. The method can include: applying an input signal to a first conductive pad of the memory device by a first probe of a probe card; transmitting the input signal through the first conductive pad, a first TAC, a first interconnect structure passing through a bonding interface of the memory device, at least one of a memory array contact and a test circuit to a test structure; receiving an output signal through a second interconnect structure passing through the bonding interface, a second TAC, at least one of the memory array contact and the test circuit from the test structure; measuring the output signal from a second conductive pad of the memory device by a second probe of the probe card; and determining a characteristic of the test structure based on the input signal and the output signal.