Feng Pan

Title: Feng Pan: Innovator in Three-Dimensional Memory Devices

Introduction

Feng Pan is a prominent inventor based in Hubei, China, known for his significant contributions to the field of memory devices. With a total of 15 patents to his name, he has made remarkable advancements in the technology of three-dimensional (3D) memory devices.

Latest Patents

Feng Pan's latest patents include innovative methods and structures that enhance the performance and efficiency of 3D memory devices. One of his notable patents is titled "Staircase etch control in forming three-dimensional memory device." This invention discloses methods for controlling a photoresist trimming rate during the formation of 3D memory devices. The method involves forming a dielectric stack over a substrate, measuring distances for trimming, and adjusting parameters based on the differences observed.

Another significant patent is the "Hybrid bonding contact structure of three-dimensional memory device." This patent describes a 3D NAND memory device that features a substrate, a staircase region with stacked dielectric and conductor layers, and a barrier structure that separates these stacks. The design aims to improve the efficiency and functionality of memory devices.

Career Highlights

Feng Pan is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to push the boundaries of memory technology. His work has been instrumental in advancing the capabilities of 3D memory devices, making them more efficient and reliable.

Collaborations

Feng Pan has collaborated with notable colleagues in his field, including Zhenyu Lu and Steve Weiyi Yang. These collaborations have contributed to the innovative developments in memory technology.

Conclusion

Feng Pan's contributions to the field of three-dimensional memory devices are noteworthy, with a strong portfolio of patents that reflect his innovative spirit. His work at Yangtze Memory Technologies Co., Ltd. continues to shape the future of memory technology.