The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Jul. 26, 2018
Yangtze Memory Technologies Co., Ltd., Wuhan, Hubei, CN;
Zhenyu Lu, Hubei, CN;
Lidong Song, Hubei, CN;
Yongna Li, Hubei, CN;
Feng Pan, Hubei, CN;
Xiaowang Dai, Hubei, CN;
Dan Liu, Hubei, CN;
Steve Weiyi Yang, Hubei, CN;
Simon Shi-Ning Yang, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, Hubei, CN;
Abstract
Embodiments of three-dimensional (3D) memory devices and methods for controlling a photoresist (PR) trimming rate in the formation of the 3D memory devices are disclosed. In an example, a method includes forming a dielectric stack over a substrate, measuring a first distance between the first trimming mark and the PR layer along a first direction, and trimming the PR layer along the first direction. The method also includes etching the dielectric stack using the trimmed PR layer as an etch mask to form a staircase, forming a second trimming mark using the first trimming mark as an etch mask, measuring a second distance between the second trimming mark and the trimmed PR layer, comparing the first distance with the second distance to determine a difference between an actual PR trimming rate and an estimated PR trimming rate, and adjusting PR trimming parameters based on the difference.