The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Jul. 11, 2022
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Longxiang Yan, Wuhan, CN;
Wei Xu, Wuhan, CN;
Bo Xu, Wuhan, CN;
Fazhan Wang, Wuhan, CN;
Lei Xue, Wuhan, CN;
Zongliang Huo, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
Three-dimensional NAND memory device and method that eliminate leakage currents and short circuits are provided. The method includes: forming a gate line slit through a plurality of alternating layers of an oxide layer and a conductive material layer, where the conductive material layer is further formed on a sidewall and a bottom of the gate line slit; performing an ion implantation process to dope at least a portion of the conductive material layer that is on the bottom and/or a portion of the sidewall of the gate line slit; and performing an etch process in the gate line slit to remove the conductive material layer that is weakened by the ion implantation process.