Longxiang Yan

Title: Longxiang Yan - Innovator in NAND Memory Technology

Introduction

Longxiang Yan is a prominent inventor based in Wuhan, China. He is known for his significant contributions to the field of memory technology, particularly in the development of three-dimensional NAND memory devices. His innovative approach addresses critical issues such as leakage currents and short circuits, which are common challenges in memory device design.

Latest Patents

Yan holds a patent for a "Three-dimensional NAND memory device and method that eliminate leakage currents and short circuits." This patent outlines a method that includes forming a gate line slit through alternating layers of an oxide layer and a conductive material layer. The conductive material layer is strategically formed on the sidewall and bottom of the gate line slit. The process involves an ion implantation technique to dope portions of the conductive material layer, followed by an etching process to remove weakened material. This innovative method enhances the reliability and efficiency of NAND memory devices.

Career Highlights

Longxiang Yan is currently associated with Yangtze Memory Technologies Co., Ltd., a leading company in the semiconductor industry. His work at this organization has positioned him as a key player in advancing memory technology. With a focus on innovation, Yan continues to contribute to the development of cutting-edge memory solutions.

Collaborations

Yan collaborates with various professionals in the field, including his coworker Wei Xu. Their combined expertise fosters an environment of innovation and progress within the company.

Conclusion

Longxiang Yan's contributions to NAND memory technology exemplify the spirit of innovation in the semiconductor industry. His patented methods not only address existing challenges but also pave the way for future advancements in memory devices.