The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Dec. 29, 2022
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Xiaoxin Liu, Wuhan, CN;
Lei Xue, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
A three-dimensional memory includes a bottom select gate structure, a stack structure disposed on the bottom select gate structure, and a top select gate structure disposed on the stack structure. The stack structure includes a channel layer extending in stack structure in the first direction of the thickness of the stack structure. The channel layer has a first conductive type impurity. At least one of the bottom select gate structure or the top select gate structure includes a semiconductor structure extending in the first direction and connected with the channel layer and having a second conductive type impurity different from the first conductive type impurity.