Company Filing History:
Years Active: 2022-2025
Title: Yali Guo: Innovator in Memory Device Technology
Introduction
Yali Guo is a prominent inventor based in Wuhan, China. She has made significant contributions to the field of memory device technology, holding a total of 3 patents. Her work focuses on innovative methods for fabricating memory devices that enhance performance and efficiency.
Latest Patents
Yali Guo's latest patents include advanced memory devices and their fabrication methods. One patent describes a memory device that features a staircase region and an array region, incorporating a wall structure and a first separation structure. The wall structure consists of dielectric pairs of a first dielectric layer and a second dielectric layer, which are stacked in the staircase region. The first separation structure is designed to be vertically aligned with a stack structure in the array region, which includes pairs of the first dielectric layer and an electrode layer.
Another patent outlines a memory device that includes a substrate and a stack structure made up of alternately arranged first dielectric layers and electrode layers. This device is organized into array regions and a staircase region, with a wall-structure region that forms a cohesive wall structure. The design also features a first separation structure positioned between two blocks in the array regions, enhancing the overall functionality of the memory device.
Career Highlights
Yali Guo is currently employed at Yangtze Memory Technologies Co., Ltd. Her role at the company allows her to apply her expertise in memory device technology and contribute to cutting-edge innovations in the field.
Collaborations
Yali collaborates with talented coworkers, including Kai Han and Zhipeng Wu. These partnerships foster a creative environment that drives innovation and enhances the development of new technologies.
Conclusion
Yali Guo is a key figure in the advancement of memory device technology, with her patents reflecting her innovative spirit and technical expertise. Her contributions continue to shape the future of memory devices, making her a notable inventor in the industry.