The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Dec. 28, 2022
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Simin Liu, Wuhan, CN;
Zongliang Huo, Wuhan, CN;
Wei Xu, Wuhan, CN;
Bo Xu, Wuhan, CN;
Yali Guo, Wuhan, CN;
Bin Chen, Wuhan, CN;
Siliu Zhang, Wuhan, CN;
Jie Su, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
The present disclosure discloses a three-dimensional memory and a fabrication method thereof. The fabrication method comprises: forming a stack structure comprising alternately stacked dielectric layers and sacrificial layers; forming a gate line slit penetrating vertically penetrating the stack structure and extending in a first horizontal direction; and etching portions of the dielectric layers and the sacrificial layers adjacent to the gate line slit to form a plurality of recesses, wherein an aperture of each recess in a vertical direction is greater than a thickness of a corresponding sacrificial layer.