Wuhan, China

Chunyuan Hou

USPTO Granted Patents = 12 

 

Average Co-Inventor Count = 2.9

ph-index = 2

Forward Citations = 8(Granted Patents)


Location History:

  • Wuhan, CN (2020 - 2023)
  • Hubei, CN (2023)

Company Filing History:


Years Active: 2020-2025

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12 patents (USPTO):Explore Patents

Title: Innovations of Chunyuan Hou

Introduction

Chunyuan Hou is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory devices, holding a total of 10 patents. His work focuses on advancing technology in three-dimensional NAND memory devices, which are crucial for modern data storage solutions.

Latest Patents

One of his latest patents is a memory device that includes a first substrate, a first memory array, a second substrate, and at least one first vertical transistor. The first memory array is disposed on the first substrate and includes at least one first word line structure. This innovative design allows the first memory array to be positioned between the first substrate and the second substrate in a vertical direction, with the first vertical transistor electrically connected to the first word line structure. Notably, part of the first vertical transistor is situated in the second substrate. Another significant patent involves methods of reducing program disturb by array source coupling in 3D NAND memory devices. This patent describes a three-dimensional NAND memory device that includes a first NAND string and a controller designed to manage the programming process effectively.

Career Highlights

Chunyuan Hou is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to innovate in the field of memory technology. His expertise and contributions have positioned him as a key figure in the development of advanced memory solutions.

Collaborations

He collaborates with talented coworkers, including Qiang Tang and Ke Liang, who contribute to the innovative projects at Yangtze Memory Technologies Co., Ltd.

Conclusion

Chunyuan Hou's work in memory device technology exemplifies the spirit of innovation and advancement in the field. His patents reflect a commitment to improving data storage solutions, making him a notable inventor in the industry.

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