The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Dec. 29, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Yan Wang, Wuhan Hubei, CN;

Chunyuan Hou, Wuhan Hubei, CN;

Masao Kuriyama, Wuhan Hubei, CN;

Zhichao Du, Wuhan Hubei, CN;

Lichuan Zhao, Wuhan Hubei, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01);
Abstract

A semiconductor device includes a plurality of bit line units, a word line unit, a bit line drive unit, and a word line drive unit. The word line unit comprises a plurality of word line stacked in a first direction, and a first and a second word line units in a second direction. A distance between the second word line unit and the word line drive unit is greater than a distance between the first word line unit and the word line drive unit. The word line drive unit provides the word line unit with a driving voltage for programming. The bit line drive unit applies a first bias voltage to a bit line unit corresponding to the first word line unit during a charging phase of programming, and a second bias voltage to a bit line unit corresponding to the second word line unit during a discharging phase.


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