The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2020

Filed:

Sep. 30, 2019
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, Hubei Province, CN;

Inventors:

Qiang Tang, Wuhan, CN;

Chunyuan Hou, Wuhan, CN;

Jiawei Chen, Wuhan, CN;

Assignee:

Yangtze Memory Technologies Co., Ltd., Wuhan, Hubei Province, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/44 (2006.01); G11C 29/00 (2006.01); G11C 11/408 (2006.01); G11C 29/30 (2006.01); G11C 29/18 (2006.01);
U.S. Cl.
CPC ...
G11C 29/76 (2013.01); G11C 11/4082 (2013.01); G11C 29/30 (2013.01); G11C 29/4401 (2013.01); G11C 2029/1806 (2013.01);
Abstract

A memory device includes a memory array, a first buffer, a second buffer, a repair logic circuit and an internal memory. The method of operating the memory device includes: the repair logic circuit receiving a bad column table from the internal memory, the bad column table containing information of a bad column in the memory array; the first buffer receiving first data; the repair logic circuit receiving the first data from the first buffer; and the repair logic circuit mapping the first data onto second data according to the bad column table.


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