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For the Inventor, By the Inventor

Wuhan, China

Qiang Tang

USPTO Granted Patents = 36 

 

Average Co-Inventor Count = 1.6

ph-index = 3

Forward Citations = 32(Granted Patents)


Location History:

  • Wuhan, CN (2020 - 2024)
  • Hubei, CN (2021 - 2024)

Company Filing History:

goldMedal36 out of 1,143 
 
Yangtze Memory Technologies Co., Ltd.
 patents

Years Active: 2020-2025

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36 patents (USPTO):Explore Patents
1. 12379857 - Dynamic peak power management for multi-die operations (2025-08-05),
2. 12229028 - Memory device with failed main bank repair using redundant bank (2025-02-18),
3. 12211537 - Method for reading and writing memory cells in three-dimensional FeRAM (2025-01-28),
4. 12142327 - Memory device capable of reducing program disturbance and erasing method thereof (2024-11-12),
5. 12133385 - Bottom select gate contacts for center staircase structures in three-dimensional memory devices (2024-10-29),
6. 12119084 - Memory device (2024-10-15),
7. 11956962 - Three-dimensional flash memory device with increased storage density (2024-04-09),
8. 11934281 - Memory device with failed main bank repair using redundant bank (2024-03-19),
9. 11880257 - Memory system and peak power management for memory dies of the memory system (2024-01-23),
10. 11797195 - Dynamic peak power management for multi-die operations (2023-10-24),
11. 11769569 - Memory device with failed main bank repair using redundant bank (2023-09-26),
12. 11735240 - Staircase bridge structures for word line contacts in three-dimensional memory (2023-08-22),
13. 11721377 - Method for reading and writing memory cells in three-dimensional FeRAM (2023-08-08),
14. 11709535 - Memory system and peak power management for memory dies of the memory system (2023-07-25),
15. 11670384 - Memory system capable of reducing the reading time (2023-06-06),

Title: Unveiling Inventor Qiang Tang's Cutting-Edge Memory Innovations

Introduction: Meet inventor Qiang Tang, a brilliant mind hailing from Wuhan, China, who has made significant contributions to the field of memory devices. With an impressive portfolio of 31 patents under his belt, Qiang Tang continues to push the boundaries of technological advancement.

Latest Patents:

1. Memory Device: Qiang Tang's memory device features a unique design with a first memory array, a second substrate, and first vertical transistors. This innovative setup allows for efficient electrical connections and enhanced performance.

2. Three-Dimensional Flash Memory Device: Qiang Tang's 3D flash memory device boasts increased storage density, thanks to its substrate, active columns of semiconducting material, local bit lines, local source lines, channel regions, word line stack, and charge-storage elements. This cutting-edge technology promises improved data storage capabilities.

Career Highlights: Qiang Tang currently serves as a key member of the dynamic team at Yangtze Memory Technologies Co., Ltd. His expertise and dedication have played a pivotal role in driving innovation within the company and the industry as a whole.

Collaborations: Qiang Tang has collaborated closely with esteemed colleagues such as Chunyuan Hou and Weirong Chen. Together, they have worked on groundbreaking projects that have shaped the landscape of memory technology.

Conclusion: In closing, inventor Qiang Tang stands as a trailblazer in the world of memory innovations. His pioneering work, coupled with his collaborative spirit, continues to propel the industry forward, setting new standards for excellence and ingenuity.

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