The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Jun. 14, 2023
Applicant:
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Inventor:
Qiang Tang, Hubei, CN;
Assignee:
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); H10B 51/10 (2023.01); H10B 51/20 (2023.01); H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
G11C 11/223 (2013.01); G11C 11/2273 (2013.01); G11C 11/2275 (2013.01); H10B 51/10 (2023.02); H10B 51/20 (2023.02); H10B 51/30 (2023.02);
Abstract
A method of programming a ferroelectric memory device is disclosed. The method includes applying a first voltage to a first word line; applying a second voltage to the first word line; and applying a pass voltage to a second word line during a period of applying the first voltage to the first word line and during a period of applying the second voltage to the first word line. The pass voltage is between the first threshold voltage and the second threshold voltage.