The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2024

Filed:

Oct. 13, 2021
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Min She, Wuhan, CN;

Qiang Tang, Wuhan, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 29/51 (2006.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 23/528 (2013.01); H01L 29/518 (2013.01); H10B 43/10 (2023.02);
Abstract

A 3D flash memory device includes a substrate having a substantial planar surface. A plurality of active columns of semiconducting material is disposed above the substrate. Each of the plurality of active columns extends along a first direction orthogonal to the planar surface of the substrate. The plurality of active columns is arranged in a two-dimensional array. Each of the plurality of active columns may comprise multiple local bit lines and multiple local source lines extending along the first direction. Multiple channel regions are disposed between the multiple local bit lines and multiple local source lines. A word line stack wraps around the plurality of active columns. A charge-storage element is disposed between the word line stack and each of the plurality of active columns.


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