Wuhan, China

Min She

This inventor holds 6 USPTO granted patents and 1 EPO patent. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2020-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Min She. Retrieved from https://idiyas.com/inventor/min-she-ip228rn7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 1.6

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Wuhan, CN (2020 - 2024)
  • Hubei, CN (2024)

Company Filing History:


Years Active: 2020-2024

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6 patents (USPTO):Explore Patents

Title: Min She: Innovator in Voltage Regulation and Flash Memory Technology

Introduction

Min She is a prominent inventor based in Wuhan, China, known for his significant contributions to the fields of voltage regulation and flash memory technology. With a total of six patents to his name, he has made remarkable advancements that enhance the efficiency and performance of electronic devices.

Latest Patents

Among his latest patents, one notable invention is a voltage regulator designed for multiple voltage levels. This innovative voltage regulator includes an operational amplifier powered by a supply voltage, which is configured to generate a first gate voltage. Additionally, it features a first transistor that receives the first gate voltage to produce a first driving voltage. A second transistor is also included, which receives a second gate voltage to generate a second driving voltage. The first gate voltage is generated based on feedback provided to the operational amplifier, while the second gate voltage is derived from the first gate voltage.

Another significant patent is for a three-dimensional flash memory device that boasts increased storage density. This device comprises a substrate with a substantial planar surface, above which a plurality of active columns of semiconducting material is arranged. Each active column extends along a first direction orthogonal to the substrate's planar surface and is organized in a two-dimensional array. The design incorporates multiple local bit lines and local source lines, with channel regions situated between them. A word line stack wraps around the active columns, and a charge-storage element is positioned between the word line stack and each active column.

Career Highlights

Min She is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to push the boundaries of innovation in memory technology. His work has been instrumental in developing advanced solutions that cater to the growing demands of the electronics industry.

Collaborations

He collaborates with talented coworkers, including Qiang Tang and Kun Yang, who contribute to the innovative environment at Yangtze Memory Technologies Co., Ltd.

Conclusion

Min She stands out as a key figure in the realm of voltage regulation and flash memory technology, with his patents reflecting a commitment to innovation and excellence. His contributions are shaping the future of electronic devices and enhancing their capabilities.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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