The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2024

Filed:

Nov. 03, 2021
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Kun Yang, Hubei, CN;

Min She, Hubei, CN;

Albert I. Ming Chang, Hubei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2020.01); G01R 19/10 (2006.01); G11C 29/50 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50004 (2013.01); G01R 19/10 (2013.01); G11C 16/0483 (2013.01); G11C 2029/5004 (2013.01);
Abstract

The present disclosure provides a circuit for detecting leakage between word lines in a memory device. The circuit includes a first and a second coupling capacitor. A first terminals of the first and second coupling capacitors are connected to a first word line and a second word line, respectively. The first terminals of the first and second coupling capacitors are also connected to a first and a second voltage supply, respectively. The circuit further includes a comparator, wherein a first input of the comparator is connected to a second terminal of the first coupling capacitor and a second input of the comparator is connected to a second terminal of the second coupling capacitor. The comparator is configured to send alarm signal when a differential voltage between the first input and the second input of the comparator is larger than a hysteresis level of the comparator.


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