Kun Yang

Title: Kun Yang: Innovator in 3D NAND Memory Technology

Introduction

Kun Yang is a prominent inventor based in Hubei, China, known for his significant contributions to the field of memory technology. With a total of seven patents to his name, Yang has made remarkable advancements in optimizing 3D NAND memory devices.

Latest Patents

One of his latest patents focuses on systems, methods, and media for the optimization of temporary read errors in 3D NAND memory devices. This patent provides innovative solutions for managing read operations after the device has recovered from an idle state. Another notable patent addresses leakage detection in three-dimensional NAND memory. This invention includes a circuit designed to detect leakage between word lines, utilizing coupling capacitors and a comparator to send alarm signals when necessary.

Career Highlights

Throughout his career, Kun Yang has worked with notable companies such as Yangtze Optical Fibre and Cable Joint Stock Limited Company and Yangtze Memory Technologies Co., Ltd. His experience in these organizations has allowed him to develop and refine his expertise in memory technology.

Collaborations

Yang has collaborated with talented individuals in the industry, including Xinben Zhang and Weijun Tong. These partnerships have contributed to his innovative work and the successful development of his patents.

Conclusion

Kun Yang's contributions to 3D NAND memory technology demonstrate his commitment to innovation and excellence in the field. His patents reflect a deep understanding of memory systems and their optimization, positioning him as a key figure in advancing memory technology.